Imagine a thin film, just nanometers thick, that could store gigabytes of data—enough for movies, video games, and videos. This is the exciting potential of ferroelectric materials for memory storage.

For the first time, a research team has demonstrated an artificial intelligence semiconductor technology that integrates the ...

A research team has discovered ferroelectric phenomena occurring at a subatomic scale in the natural mineral Brownmillerite. A research team led by Prof. Si-Young Choi from the Department of Materials ...

Two advances in ferroelectric memory research by Imec push ferroelectric capacitors and ferroelectric field-effect transistors towards becoming enablers for low-voltage operation and high-density ...

The ferroelectrical properties of materials have found a variety of uses over the years, including in semiconductor applications. Ferroelectric memory is among the most interesting and possibly ...

Over the past five years, NAND flash has gone from an exceedingly expensive storage solution that only a handful of customers could afford to a mainstream product used by millions of high-speed ...

There have been – and are – several fast, non-volatile memory technologies that could potentially fill a gap in the memory-storage hierarchy between NAND and NOR on the one hand and DRAM on the other.

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

The AI era needs better memory solutions, and Imec is looking to fill the void ...

The FM24C512 512-Kbit nonvolatile ferroelectric RAM memory features an industry-standard two-wire serial interface. The chip is targets applications such as utility metering and real-time ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...