Here, a power amplifier circuit has been designed using MOSFET to produce 100 W output to drive a load of about 8 Ω. Here, a power amplifier circuit has been designed using MOSFET to produce 100 W ...

The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.

ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--achieving industry-leading safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

The power transistor must be chosen to provide fast response while also withstanding high power dissipation. Several electrical and thermal characteristics must be considered: 1. An array of N current ...

This course introduces more advanced concepts of switched-mode converter circuits. Realization of the power semiconductors in inverters or in converters having bidirectional power flow is explained.

(Bipolar Junction) Transistors versus MOSFETs: both have their obvious niches. FETs are great for relatively high power applications because they have such a low on-resistance, but transistors are ...

For cost reasons, kW level inverters deploy Insulated Gate Bipolar Transistors (IGBTs). However for high efficiency and high reliability applications, it is worth considering the use of Super-Junction ...