Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...
Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
Find a downloadable version of this story in pdf format at the end of the story. Silicon Schottky diodes are used in power applications because of their low forward voltage drop, which allows lower ...
IXYS announces the availability of the DCG45X1200NA and the DCG130X1200NA, both dual 1200V rated SiC Schottky diodes in MiniBLOC TM (SOT-227) package, which are fully isolated. The IXYS SiC schottky ...
As active devices go, it doesn’t get much simpler than a diode. Two terminals. Current flows in one direction and not in the other. Simple, right? Well, then there are examples with useful side ...
This file type includes high resolution graphics and schematics. Front-end limiter circuits using Schottky and PIN diodes can provide needed protection in communications and other RF systems. However, ...
A Schottky junction-enhanced AuNPs/GOQDs nanocomposite enhances PDT efficacy by promoting reactive oxygen species (ROS) ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
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