UnitedSiC has added four silicon carbide junction barrier Schottky (JBS) diodes complement its SiC FET and JFET transistor products. The UJ3D 1,200V and 1,700V devices are part of the company’s 3rd ...
The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...
The first measurement operation concerns the forward voltage of the SiC diode. As shown in Figure 3, this is the simple electric circuit of the test, its 3D representation, and the excerpt of the ...
Fairchild Launches 1200V SiC Diode for High-Speed Solar Inverters and Rugged Industrial Applications
SAN JOSE, Calif.--(BUSINESS WIRE)--Fairchild (NASDAQ:FCS), a leading global supplier of high-performance semiconductor solutions, released its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN ...
After lying dormant in research laboratories for decades, silicon carbide (SiC) is beginning to realize its potential as a substrate material. [Transistor After lying dormant in research laboratories ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...
Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with ...
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